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KTC3875 [BL Galaxy Electrical]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
KTC3875
型号： KTC3875
厂家： BL Galaxy Electrical    BL Galaxy Electrical
描述：

NPN Silicon Epitaxial Planar Transistor
NPN硅外延平面晶体管

晶体 晶体管
文件： 总4页 (文件大小：233K)
中文：  中文翻译
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BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
KTC3875  
FEATURES  
Pb  
Lead-free  
z
z
z
Complementary To KTA1504.  
Excellent HFE Linearity.  
Low noise.  
APPLICATIONS  
z
General purpose application, switching application.  
SOT-23  
ORDERING INFORMATION  
Type No.  
Marking  
ALO/ALY/ALG/ALL  
Package Code  
SOT-23  
KTC3875  
MAXIMUM RATING @ Ta=25℃ unless otherwise specified  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
60  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
V
5
V
Collector Current -Continuous  
Base Current  
150  
30  
mA  
mA  
mW  
℃
IB  
Collector Power Dissipation  
Junction and Storage Temperature  
PC  
150  
Tj,Tstg  
-55~150  
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Document number: BL/SSSTC056  
Rev.A  
www.galaxycn.com  
1
BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
KTC3875  
Parameter  
Symbol Test conditions  
MIN  
TYP MAX UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO  
IC=100μA,IE=0  
60  
V
V
V
V(BR)CEO  
V(BR)EBO  
IC=1mA,IB=0  
50  
5
IE=100μA,IC=0  
ICBO  
VCB=60V,IE=0  
VEB=5V,IC=0  
0.1  
μA  
μA  
Emitter cut-off current  
IEBO  
0.1  
DC current gain  
hFE  
VCE=6V,IC=2mA  
70  
80  
700  
0.25  
Collector-emitter saturation voltage  
IC=100mA, IB=10mA  
VCE(sat)  
0.1  
V
Transition frequency  
VCE=10V, IC= 1mA  
fT  
MHz  
pF  
Collector output capacitance  
VCB=10V,IE=0,f=1MHz  
Cob  
2.0  
1.0  
3.5  
10  
VCE=6V,IC=0.1mA,  
Noise figure  
NF  
dB  
F=1KHz,Rg=10KΩ  
CLASSIFICATION OF hFE  
Rank  
Range  
Marking  
O
Y
GR  
200-400  
ALG  
BL  
70-140  
ALO  
120-240  
ALY  
350-700  
ALL  
Document number: BL/SSSTC056  
Rev.A  
www.galaxycn.com  
2
BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
KTC3875  
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified  
Document number: BL/SSSTC056  
Rev.A  
www.galaxycn.com  
3
BL Galaxy Electrical  
Production specification  
NPN Silicon Epitaxial Planar Transistor  
KTC3875  
PACKAGE OUTLINE  
Plastic surface mounted package  
SOT-23  
A
SOT-23  
Dim  
A
Min  
2.85  
1.25  
Max  
2.95  
1.35  
E
K
B
B
C
D
E
1.0Typical  
0.37  
0.35  
1.85  
0.02  
0.43  
0.48  
1.95  
0.1  
J
D
G
G
H
J
H
0.1Typical  
C
K
2.35  
2.45  
All Dimensions in mm  
SOLDERING FOOTPRINT  
Unit : mm  
PACKAGE INFORMATION  
Device  
Package  
SOT-23  
Shipping  
KTC3875  
3000/Tape&Reel  
Document number: BL/SSSTC056  
Rev.A  
www.galaxycn.com  
4

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